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Monday, November 9, 2020 | History

5 edition of Stress-Induced Phenomena in Metallization found in the catalog.

Stress-Induced Phenomena in Metallization

Third International Workshop (AIP Conference Proceedings, No. 373)

by

  • 39 Want to read
  • 38 Currently reading

Published by American Institute of Physics .
Written in English

    Subjects:
  • Condensed matter physics (liquids & solids),
  • Materials science,
  • Science/Mathematics,
  • Material Science,
  • Science,
  • Physics,
  • Science / Physics

  • Edition Notes

    ContributionsPaul S. Ho (Editor), John Bravman (Editor), Che-Yu Li (Editor), John Sanchez (Editor)
    The Physical Object
    FormatHardcover
    Number of Pages304
    ID Numbers
    Open LibraryOL8646108M
    ISBN 101563964392
    ISBN 109781563964398

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Stress-Induced Phenomena in Metallization Download PDF EPUB FB2

A volume taken from papers presented at the Workshop on Stress Induced Phenomena in Metallization. This conference has been extended to reflect interest in interconnect metallization.

First, the topics in metallization were extended to include problems related to atomic transport for reflow and filling of vias and contact holes, silicadation, and barrier supportselschools.com: $ Stress Induced Phenomena in Metallization: Sixth International Workshop on Stress Induced Phenomena in Metallization, Ithaca, New York, July Stress-Induced Phenomena Metallizat.) [Shefford P.

Baker, Matti A. Korhonen, Eduard Arzt, Paul S. Ho] on supportselschools.com *FREE* shipping on qualifying offers. Tiny metal structures, less than a millionth of a meter across, are critical building Author: Shefford P. Baker. Stress-Induced Phenomena Metallizat.) [Paul S.

Ho, Shefford P. Baker, Tomoji Nakamura, Cynthia A. Volkert] on supportselschools.com *FREE* shipping on qualifying offers. These proceedings contain new research results and advances in basic understanding of stress-induced phenomena in supportselschools.com: Paul S.

supportselschools.com: Stress-induced Phenomena in Metallization: Proceedings of the Second International Workshop held in Austin, Texas, March (AIP Conference Stress-Induced Phenomena Metallizat.) (): P.S. Ho, C.Y. Li: Books. Stress induced Phenomena in Metallization: Fifth International Workshop: Stuttgart, Germany, June(AIP Conference Proceedings / AIP Phenomena Metallizat.) [Oliver Kraft, Eduard Arzt, Cynthia A.

Volkert, Paul S. Ho, Hidekazu Okabayashi] on supportselschools.com *FREE* shipping on qualifying offers. The performance of computer chips has been improved by reducing the size of all components.

Title: Stress-Induced Phenomena in Metallization: Authors: Ho, Paul S.; Zschech, Ehrenfried; Ogawa, Shinichi Publication: Stress-Induced Phenomena in Metallization.

These proceedings represent papers presented at the Second International Workshop on Stress Induced Phenomena in Metallization held on Marchat the University of Texas at Austin, U.S.A. The papers included in this volume discuss stress-induced void formation and electromigration failures in narrow-line inter-connect metallization.

Fishpond Indonesia, Stress-Induced Phenomena in Metallization: Tenth International Workshop on Stress-Induced Phenomena in Metallization by Sun-Chan Jeong (Edited) Yutaka Utsuno (Edited)Buy.

Books online: Stress-Induced Phenomena in Metallization: Tenth International Workshop on Stress-Induced Phenomena in Metallization,supportselschools.comd: American Institute of Physics.

Preface: Stress-Induced Phenomena and Reliability in 3D Microelectronics This volume of proceedings Stress-Induced Phenomena in Metallization book papers from three International Workshops “Stress Management for 3D ICs using Through.

Stress-Induced Phenomena in Metallization: Seventh International Workshop on Stress-Induced Phenomena in Metallization held June, in Austin, Texas. Edited by Paul S. Ho, Shefford P.

Baker, Tomoji Nakamura, and Cynthia A. Volkert. Abstract. Thermal stresses in metallizations are of current concern in the microelectronics industry. Stress-induced void and hillock formation are the main causes of interconnect failure before service.

1–4 Recently there has been a growing concern that stress-induced voids in the interconnect lines, formed during fabrication, may enhance subsequent electromigration damage during the use of Cited by: 3.

11th International Workshop on Stress-Induced Phenomena in Metallization April 12 - 14, in Dresden, Germany.

Some impressions. Stress-Induced Phenomena in Metallization book Induced Phenomena in Metallization: Sixth International Workshop on Stress, held July, in Ithaca, NY. Edited by Shefford P.

Baker, Matti A. Korhonen, Eduard Arzt, and Paul S. AIP Conference Proceedings, Vol.(AIPC Homepage) Publication Date.

The aim of this text of stress-induced phenomena in metallization is to assess the current understanding of the problems, to discuss the implications for the reliability of future devices.

"Stress Induced Phenomena in Metallizations" IEEE Transaction of Device, Materials and Reliability 16 () 4 Book (Monography) 1. Zschech "Bondkontakte. Metallphysikalische Prozesse in mikroelektronischen Drahtbondkontakten integrierter Schaltkreise" (.

Stress Management for 3D ICS Using Through Silicon Vias:: International Workshop on Stress Management for 3D ICS Using Through Silicon Vias. Get this from a library. Stress-induced phenomena in metallization: third international workshop, Palo Alto, CA June [P S Ho;].

Get this from a library. Stress-induced phenomena in metallization: eighth International Workshop on Stress-Induced Phenomena in Metallization, Dresden. Proceedings of First International Workshop on Stress-Induced Phenomena in Metallization.

"Held in the Sheraton Inn, Ithaca, New York on September"--Page vii. "DOE CONF". Get this from a library. Stress-induced phenomena in metallization: Sixth International Workshop on Stress-Induced Phenomena in Metallization, Ithaca, New York, July [Shefford P Baker;]. Okoro, C, Huyghebaert, C, Van Olmen, J, Labie, R, Lambrinou, K, Vandevelde, B, Beyne, E & Vandepitte, DElimination of The Axial Deformation Problem of Cu-TSV in 3D Integration.

in E Zschech, S Ogawa & PS Ho (eds), Stress-Induced Phenomena in Metallization: Eleventh International Workshop on Stess-Induced Phenomena in Metallization. vol Cited by: Stress induced mass transport (acoustomigration) is the dominant failure mechanism in surface acoustic wave (SAW) devices.

A strong microstructure damage of the metal finger electrodes by void and hillock formation results in an irreversible degradation of the electrical characteristics of the device. In: Stress-induced phenomena in metallization: Sixth international workshop on stress-induced phenomena in metallization, pp – Google Scholar An JH, Ferreira PJ () In situ transmission electron microscopy observations of μm and Cited by: 2.

Indeed, the stress-induced voiding is frequently observed in the cross points of via and lines or via and pads in the damascene Cu interconnects.

Ogawa et al. [4] proposed a model for stress voiding of Cu interconnects, in which a supersaturated vacancy migrates along the thermal stress gradient and accumulates below the supportselschools.com by: 8.

Paul S. Ho, Shinichi Ogawa, and Ehrenfried Zschech, “Stress-Induced Phenomena in Metallization”, Conference Proceedings of the Tenth International Workshop on Stress-Induced Phenomena in Metallization, Austin, Texas, NovemberAIP Conference Proceedings, VolumeMeasurement of Stresses in Thin Films and Their Relaxation.

“High resolution microdiffraction studies using synchrotron radiation,” 6th International Workshop on Stress-Induced Phenomena in Metallization, Gao H.

() Measurement of Stresses in Thin Films and Their Relaxation. In: Gupta D. (eds) Diffusion Processes in Advanced Author: Oliver Kraft, Huajian Gao.

CP, Stress-Induced Phenomena in Metallization: Sixth International Workshop, edited by S. Baker, M. Korhonen, E. Arzt, and P. Ho, pp. Trove: Find and get Australian resources. Books, images, historic newspapers, maps, archives and more. May 22,  · Gan Z H, Shao W, Mhaisalkar S G, Chen Z and Gusak A Stress-Induced Phenomena in Metallization: 8th Int.

Workshop (New York: AIP) pp [44] Tan C M, Roy A, Vairagar A V, Krishnamoorthy A and Mhaisalkar S G Current crowding effect on copper dual damascene via bottom failure for ULSI applications IEEE Trans.

Device supportselschools.com: Cher Ming Tan. Stress-Induced Phenomena in Metallization: Tenth International Workshop on Stress-Induced Phenomena in Metallization, vol.AIP, Austin, TX (), pp. Google Scholar [9]Cited by: Stress-induced phenomena in metallization. Eleventh International Workshop on Stress-Induced Phenomena in Metallization PrefaceAuthor: E.

Zschech, P. Ho and S. Ogawa. We also showed that the voids and fractures causing stress-induced migration result from the expansion of initial voids larger than the critical size. If the size of initial voids can be controlled to smaller than the critical size, voids and fractures due to stress-induced migration would not supportselschools.com by: 5.

Feb 25,  · This paper reports on two types of voiding which occur in Al lines in integrated circuits. The first type of voiding occurs in high-temperature processes during chip fabrication, in which the thermal stress is expected to be supportselschools.com by: 2.

Discover Book Depository's huge selection of Shinichi Ogawa books online. Free delivery worldwide on over 20 million titles. In Stress-Induced Phenomena in Metallization - Tenth International Workshop on Stress-Induced Phenomena in Metallization (pp. (AIP Conference Proceedings; Vol.

(AIP Conference Proceedings; Vol. ).Author: Huai Huang, Bin Li, Qiu Zhao, Zhiquan Luo, Jay Im, Min K. Kang, Richard A.

Allen, Michael W. Cresswe. Poster: International Workshop on Stress-Induced Phenomena in Metallization, Dresden; - ; in "8 th International Workshop on Stress-Induced Phenomena in Metallization.

Kitamura and T. Shibutani, Stress Induced Phenomena in Metallization, AIP Conf. Proc. American Institute of Physics, (). Google ScholarAuthor: T. Kitamura, T. Shibutani. Jul 22,  · 1. Introduction. Mechanical properties of thin films have received considerable attention because of their length-scale dependence, and its implications on the reliable operation of micro-electronic and micro-electromechanical systems.

Most of the studies investigate the length-scale effects on the mechanical properties of thin films at room supportselschools.com by: Ryu, SK, Lu, KH, Zhang, X, Im, J, Ho, PS & Huang, RThermomechanical reliability challenges for 3D interconnects with through-silicon vias.

in Stress-Induced Phenomena in Metallization - Eleventh International Workshop on Stress-Induced Phenomena in supportselschools.com by: 8. Abstract Integrated circuits with aluminum metallization for products with high current densities need a metal stack with liner and antireflective coating (ARC) which can fulfill several requirements (e.g.

low sheet resistance, high reliability, smooth surface, good adhesion, thermal stability, etc.). 1. Introduction.

Mechanical stresses in small-scale structures, such as thin films on substrates, metallization levels, vias, and conductor lines in semiconductor devices, often reach values of several hundred MPa after processing or during service (e.g.,).These high stresses can in turn induce defects that cause failure of complete supportselschools.com by: Stronger than a Hundred Men A History of the Vertical Water Wheel Johns Hopkins Studies in the Histo - Duration: 41 seconds.Jun 01,  · This collection of 96 papers (some invited) and a keynote address consists of both the proceedings of the Advanced Metallization Conference held in October in San Diego, and the Advanced Metallization Conference in Asia, held in September of that year at the U.

of Tokyo.